APTGL700DA120D3G APTGL700DA120D3G C rev 1 october, 2012 www.microsemi.com 1-6 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 840 i c continuous collector current t c = 80c 700 i cm pulsed collector current t c = 25c 1800 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 3000 w rbsoa reverse bias safe operating area t j = 125c 1200a @ 1100v these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com 1 2 3 q2 67 v ces = 1200v i c = 700a @ tc = 80c application ? ac and dc motor control ? switched mode power supplies ? power factor correction features ? trench + field stop igbt 4 technology - low voltage drop - low leakage current - low switching losses - soft recovery parallel diodes - low diode vf - rbsoa and scsoa rated ? kelvin emitter for easy drive ? high level of integration ? m6 power connectors benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant boost chopper trench + field stop igbt4 power module downloaded from: http:///
APTGL700DA120D3G APTGL700DA120D3G C rev 1 october, 2012 www.microsemi.com 2-6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 5 ma t j = 25c 1.8 2.2 v ce(sat) collector emitter saturation voltage v ge = 15v i c = 600a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 11ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 800 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 37.2 c oes output capacitance 2.3 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 2 nf q g gate charge v ge = -8v / 15v ; v ce =600v i c =600a 3.4 c t d(on) turn-on delay time 200 t r rise time 40 t d(off) turn-off delay time 380 t f fall time inductive switching (25c) v ge = 15v v ce = 600v i c = 600a r g = 0.8 ? 70 ns t d(on) turn-on delay time 220 t r rise time 50 t d(off) turn-off delay time 450 t f fall time inductive switching (150c) v ge = 15v v ce = 600v i c = 600a r g = 0.8 ? 80 ns e on turn-on switching energy t j = 150c 54 mj e off turn-off switching energy v ge = 15v v ce = 600v i c = 600a r g = 0.8 ? t j = 150c 58 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 150c 2400 a chopper ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum repetitive reverse voltage 1200 v t j = 25c 250 i rrm maximum reverse leakage current v r =1200v t j = 150c 2000 a i f dc forward current t c = 80c 600 a t j = 25c 1.7 2.2 v f diode forward voltage i f = 600a v ge = 0v t j = 150c 1.65 v t j = 25c 155 t rr reverse recovery time t j = 150c 300 ns t j = 25c 53 q rr reverse recovery charge t j = 150c 110 c t j = 25c 23 e rr reverse recovery energy i f = 600a v r = 600v di/dt = 7000a/s t j = 150c 46 mj downloaded from: http:///
APTGL700DA120D3G APTGL700DA120D3G C rev 1 october, 2012 www.microsemi.com 3-6 igbt parallel protection diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum repetitive reverse voltage 1200 v t j = 25c 100 i rrm maximum reverse leakage current v r =1200v t j = 150c 500 a i f dc forward current t c = 80c 75 a t j = 25c 1.7 2.2 v f diode forward voltage i f = 75a v ge = 0v t j = 150c 1.65 v t j = 25c 155 t rr reverse recovery time t j = 150c 300 ns t j = 25c 7.3 q rr reverse recovery charge t j = 150c 15.2 c t j = 25c 2.6 e rr reverse recovery energy i f = 75a v r = 600v di/dt = 1900a/s t j = 150c 5.5 mj thermal and package characteristics symbol characteristic min typ max unit igbt 0.05 chopper diode 0.10 r thjc junction to case thermal resistance igbt parallel diode 0.62 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 125 c for terminals m6 3 5 torque mounting torque to heatsink m6 3 5 n.m wt package weight 350 g d3 package outline (dimensions in mm) downloaded from: http:///
APTGL700DA120D3G APTGL700DA120D3G C rev 1 october, 2012 www.microsemi.com 4-6 typical performance curve output characteristics (v ge =15v) t j =25c t j =150c 0 200 400 600 800 1000 1200 01234 v ce (v) i c (a) output characteristics v ge =15v v ge =19v v ge =9v 0 200 400 600 800 1000 1200 01234 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =150c 0 200 400 600 800 1000 1200 5 6 7 8 9 10 11 12 13 v ge (v) i c (a) energy losses vs collector current eon eoff err 0 40 80 120 160 0 200 400 600 800 1000 1200 i c (a) e (mj) v ce = 600v v ge = 15v r g = 0.8. ? t j = 150c eon eoff err 0 30 60 90 120 150 180 0 1.25 2.5 3.75 5 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 600a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 300 600 900 1200 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =150c r g =0.8 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.01 0.02 0.03 0.04 0.05 0.06 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt downloaded from: http:///
APTGL700DA120D3G APTGL700DA120D3G C rev 1 october, 2012 www.microsemi.com 5-6 hard switching zcs zvs 0 40 80 120 160 200 0 240 480 720 960 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =0.8 ? t j =150c tc=75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.03 0.06 0.09 0.12 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode forward characteristic of diode t j =25c t j =150c 0 300 600 900 1200 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) downloaded from: http:///
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